The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Jun. 23, 2017
Lg Innotek Co., Ltd., Seoul, KR;
Rak Jun Choi, Seoul, KR;
Byeoung Jo Kim, Seoul, KR;
Hyun Jee Oh, Seoul, KR;
Jung Yeop Hong, Seoul, KR;
LG INNOTEK CO., LTD., Seoul, KR;
Abstract
An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.