The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Nov. 08, 2017
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Zhenqiang Ma, Middleton, WI (US);
Tzu-Hsuan Chang, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0304 (2006.01); H01L 31/11 (2006.01); G01J 1/42 (2006.01); H01L 31/0224 (2006.01); H01L 31/108 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); G01J 1/429 (2013.01); H01L 31/022408 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 31/108 (2013.01); H01L 31/1085 (2013.01); H01L 31/11 (2013.01); G01J 2001/4473 (2013.01);
Abstract
Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).