The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Apr. 04, 2018
The Penn State Research Foundation, University Park, PA (US);
Saptarshi Das, State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Abstract
A device and method for manufacturing a two-dimensional electrostrictive field effect transistor having a substrate, a source, a drain, and a channel disposed between the source and the drain. The channel is a two-dimensional layered material and a gate proximate the channel. The gate has a column of an electrostrictive or piezoelectric or ferroelectric material, wherein an electrical input to the gate produces an elongation of the column that applies a force or mechanical stress on the channel and reduces a bandgap of two-dimensional material such that the two-dimensional electrostrictive field effect transistor operates with a subthreshold slope that is less than 60 mV/decade.
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