The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 29, 2017
Applicants:

Denso Corporation, Kariya, Aichi-pref., JP;

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Yuichi Takeuchi, Kariya, JP;

Katsumi Suzuki, Toyota, JP;

Yukihiko Watanabe, Nagakute, JP;

Assignees:

DENSO CORPORATION, Kariya, JP;

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/02529 (2013.01); H01L 21/02579 (2013.01); H01L 21/049 (2013.01); H01L 21/0475 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 21/761 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/7397 (2013.01);
Abstract

All of intervals between adjacent p type guard rings are set to be equal to or less than an interval between p type deep layers. As a result, the interval between the p type guard rings becomes large, i.e., the trenches are formed sparsely, so that the p type layer is prevented from being formed thick at the guard ring portion when the p type layer is epitaxially grown. Therefore, by removing the p type layer in the cell portion at the time of the etch back process, it is possible to remove the p type layer without leaving any residue in the guard ring portion. Therefore, when forming the p type deep layer, the p type guard ring and the p type connection layer by etching back the p type layer, the residue of the p type layer is restricted from remaining in the guard ring portion.


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