The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Aug. 10, 2018
Hrl Laboratories, Llc, Malibu, CA (US);
David F. Brown, Thousand Oaks, CA (US);
Jeong-Sun Moon, Moorpark, CA (US);
Yan Tang, Oak Park, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A four-terminal GaN transistor and methods of manufacture, the transistor having source and drain regions and preferably two T-shaped gate electrodes, wherein a stem of one of the two T-shaped gate electrodes is more closely located to the source region than it is to a stem of the other one of the two T-shaped gate electrodes and wherein the stem of the other one of the two T-shaped gate electrodes is more closely located to the drain region than it is to the stem of said one of the two T-shaped gate electrodes. The the gate closer to the source region is a T-gate, and the proximity of the two gates is less than 500 nm from each other. The spacing between the stem of the RF gate and source region and the stem of the DC gate and drain region are preferably defined by self-aligned fabrication techniques. The four-terminal GaN transistor is capable of operation in the W-band (75 to 100 GHz).