The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Nov. 06, 2018
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Shintaro Sato, Atsugi, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); G01N 27/414 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/49 (2013.01); G01N 27/4141 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/28026 (2013.01); H01L 21/28525 (2013.01); H01L 29/1606 (2013.01); H01L 29/408 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/66045 (2013.01); H01L 29/78 (2013.01); H01L 21/0272 (2013.01); H01L 21/0274 (2013.01); H01L 21/32136 (2013.01);
Abstract
An electronic device includes, a semiconductor layer, a source region and a drain region provided with the semiconductor layer to be interposed therebetween, a gate insulation film on the semiconductor layer between the source region and the drain region, and a gate of a graphene on the gate insulation film. The gate insulation film induces doping of charges in the graphene.