The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Feb. 19, 2019
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Makoto Mizukami, Ibo Hyogo, JP;
Masaru Furukawa, Himeji Hyogo, JP;
Teruyuki Ohashi, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; a first silicon carbide region; second and third silicon carbide regions between the first silicon carbide region and the first plane; a fourth silicon carbide region between the second silicon carbide region and the first plane; a first and second gate electrodes; a suicide layer on the fourth silicon carbide region; a first electrode on the first plane having a first portion and a second portion, the first portion being in contact with the first silicon carbide region, the second portion being in contact with the suicide layer; a second electrode on the second plane; and an insulating layer between the first portion and the second portion having a first side surface and a second side surface, an angle of the first side surface being smaller than that of the second side surface.