The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jan. 12, 2018
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Maximilian Treiber, Munich, DE;

Franz Hirler, Isen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 23/58 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1087 (2013.01); H01L 23/585 (2013.01); H01L 29/407 (2013.01); H01L 29/41775 (2013.01); H01L 29/4232 (2013.01); H01L 29/7802 (2013.01); H01L 29/7803 (2013.01); H01L 21/823462 (2013.01); H01L 29/0634 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device includes a transistor. The transistor includes a source region adjacent to a first main surface of a semiconductor substrate, the source region being electrically coupled to a source terminal via a source contact. The transistor further includes a gate electrode over the first main surface of the semiconductor substrate, a drain region adjacent to a second main surface of the semiconductor substrate, and a conductive plate vertically adjacent to the gate electrode. The conductive plate is in electrical contact with the source terminal. The transistor further includes an insulating material arranged between the conductive plate and the source contact in a direction parallel to the first main surface.


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