The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Mar. 02, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); H01L 23/528 (2013.01); H01L 27/249 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 29/0676 (2013.01);
Abstract
A storage device including a transistor portion including a transistor, a plurality of interlayer insulating films provided above the transistor portion, a plurality of first conductive layers provided respectively between the plurality of interlayer insulating films, and a second conductive layer extending through the plurality of interlayer insulating films and the plurality of first conductive layers, the second conductive layer having one end electrically connected to the transistor portion, and a part that extends beyond a portion of the transistor portion.