The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Oct. 22, 2018
Applicant:

Shanghai Tianma Micro-electronics Co., Ltd., Shanghai, CN;

Inventors:

Xingda Xia, Shanghai, CN;

Gang Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); G02B 5/20 (2006.01); H01L 25/16 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); G02B 5/201 (2013.01); H01L 25/167 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/385 (2013.01); H01L 33/50 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A display panel is provided. The display panel includes a display region and a non-display region. The display region includes a first substrate, containing an N-type semiconductor layer including a plurality of protrusions and a plurality of light-emitting diodes. Each light-emitting diode includes an island-shaped structure. The island-shaped structure includes a protrusion, a light-emitting layer, and a P-type semiconductor layer. The display region also includes an N electrode and a plurality of P electrodes. The N electrode has a mesh structure, and the island-shaped structure is disposed in a mesh opening of the mesh structure. The N electrode is electrically connected to the N-type semiconductor layer. The plurality of P electrodes are disposed, in a one-to-one correspondence with the plurality of light-emitting diodes, on a side opposite to the N-type semiconductor layer. Each P electrode is electrically connected to the P-type semiconductor layer.


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