The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

May. 13, 2016
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Thales, Courbevoie, FR;

Inventors:

François Templier, Grenoble, FR;

Lamine Benaissa, Massy, FR;

Marc Rabarot, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 31/102 (2006.01); H01L 31/00 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 27/153 (2013.01); H01L 25/0756 (2013.01); H01L 27/15 (2013.01); H01L 31/00 (2013.01); H01L 31/102 (2013.01); H01L 33/0079 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 25/0753 (2013.01);
Abstract

A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.


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