The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 07, 2018
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Sung-Man Kim, Hwaseong-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/376 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14603 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14645 (2013.01); H01L 27/14654 (2013.01); H04N 5/378 (2013.01); H04N 5/3765 (2013.01);
Abstract

An image sensor is provided. The image sensor may include first to fourth unit pixels. The first unit pixel includes a first photodiode, a first transfer gate, and a first floating diffusion region, and the second unit pixel includes a second photodiode, a second transfer gate, and a second floating diffusion region, and the third unit pixel includes a third photodiode, a third transfer gate, and a third floating diffusion region, and the fourth unit pixel includes a fourth photodiode, a fourth transfer gate, and a fourth floating diffusion region. The first photodiode and the third photodiode may be N-type photodiodes. The second photodiode and the fourth photodiode may be P-type photodiodes.


Find Patent Forward Citations

Loading…