The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Feb. 25, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Hiroyuki Yamasaki, Nagoya, JP;

Hideaki Harakawa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H01L 27/11565 (2017.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); H01L 27/1157 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); H01L 27/11565 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first conductive films, a second conductive film, a first pillar including a first semiconductor film and a first insulator, a second semiconductor film, and a second pillar including a second insulator and a third conductive film. The first conductive films are stacked with respective insulator layers interposed therebetween. The second conductive film is provided above the first conductive films with an insulator layer interposed therebetween. The first semiconductor film penetrate the first conductive films in a stacking direction of the first conductive films. The first insulator is provided on a side surface of the first semiconductor film.


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