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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10734386 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Mar. 06, 2017

Memory element and manufacturing method of memory element

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takuya Ito, Kanagawa, JP;

Koichiro Saga, Tokyo, JP;

Assignee:

Sony Corporation, Toyko, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Tuan T Nguyen

Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/105 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 29/82 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/105 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

To further improve reliability as an element for the memory element. Provided is a memory element including: a plurality of magnetoresistive elements having an MTJ structure that are arrayed on a substrate. There is a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in the magnetoresistive element other than a region that functions as the magnetoresistive element, and the region in which magnetism is neutralized includes an alloy containing a first element constituting the magnetic material layer and a second element having an fcc structure when forming an alloy with the first element.

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