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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10734383 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Jan. 02, 2018

Methods, structures, and designs for self-aligning local interconnects used in integrated circuits

Applicant:

Tela Innovations, Inc., Los Gatos, CA (US);

Inventors:

Michael C. Smayling, Fremont, CA (US);

Scott T. Becker, Scotts Valley, CA (US);

Assignee:

Tela Innovations, Inc., Los Gatos, CA (US);

Attorney:

Penilla IP, APC

Primary Examiner:

Sonya D McCall-Shepard

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/768 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 21/8238 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); G06F 30/394 (2020.01); H01L 27/105 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); G06F 30/394 (2020.01); H01L 21/28518 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/105 (2013.01); G03F 1/14 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit includes a gate electrode level region that includes a plurality of linear-shaped conductive structures. Each of the plurality of linear-shaped conductive structures is defined to extend lengthwise in a first direction. Some of the plurality of linear-shaped conductive structures form one or more gate electrodes of corresponding transistor devices. A local interconnect conductive structure is formed between two of the plurality of linear-shaped conductive structures so as to extend in the first direction along the two of the plurality of linear-shaped conductive structures.

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