The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Feb. 22, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jin-Nam Kim, Anyang-si, KR;
Tsukasa Matsuda, Seongnam-si, KR;
Rak-Hwan Kim, Suwon-si, KR;
Byung-Hee Kim, Seoul, KR;
Nae-In Lee, Seoul, KR;
Jong-Jin Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.