The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 10, 2015
Applicant:

Element Six Technologies Limited, Didcot, Oxfordshire, GB;

Inventors:

John Robert Brandon, Didcot, GB;

Ian Friel, Didcot, GB;

Michael Andrew Cooper, Didcot, GB;

Geoffrey Alan Scarsbrook, Didcot, GB;

Ben Llewlyn Green, Didcot, GB;

Assignee:

Element Six Technologies Limited, Didcot, Oxfordshire, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C30B 29/04 (2006.01); C23C 16/27 (2006.01); C23C 16/511 (2006.01); C30B 25/10 (2006.01); C23C 16/458 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32201 (2013.01); C23C 16/274 (2013.01); C23C 16/458 (2013.01); C23C 16/511 (2013.01); C30B 25/105 (2013.01); C30B 25/205 (2013.01); C30B 29/04 (2013.01); H01J 37/3222 (2013.01); H01J 37/3244 (2013.01); H01J 37/32192 (2013.01); H01J 37/32247 (2013.01); H01J 37/32284 (2013.01); H01J 37/32293 (2013.01); H01J 37/32302 (2013.01); H01J 37/32715 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01);
Abstract

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.


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