The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 21, 2019
Applicant:

Eagle Technology, Llc, Melbourne, FL (US);

Inventors:

Arlynn W. Smith, Blue Ridge, VA (US);

Dan Chilcott, Buchanan, VA (US);

Assignee:

Elbit Systems of America, LLC, Forth Worth, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 31/50 (2006.01); H01J 9/12 (2006.01); H01J 1/34 (2006.01);
U.S. Cl.
CPC ...
H01J 31/507 (2013.01); H01J 1/34 (2013.01); H01J 9/125 (2013.01); H01J 2201/3423 (2013.01); H01J 2231/50015 (2013.01); H01J 2231/5016 (2013.01);
Abstract

A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.


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