The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Sep. 20, 2019
Applicant:

Seagate Technology Llc, Cupertino, CA (US);

Inventors:

Earl T. Cohen, Oakland, CA (US);

Hao Zhong, Milpitas, CA (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G01R 19/00 (2006.01); G11C 16/28 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G01R 19/0084 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 16/3427 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 7/14 (2013.01);
Abstract

Methods, systems and computer-readable storage media for determining a new optimal read threshold voltage associated with a group of pages of non-volatile memory. It is determined whether the current optimal read threshold voltage associated with the group of pages is out of tolerance based at least in part on a retention drift history associated with the group of pages. Upon determining that the current optimal read threshold voltage is out of tolerance, reference cells associated with the group of pages are written with a pattern having a known statistical distribution of ones and zeroes. The new optimal read threshold voltage associated with the group of pages is determined by reading the reference cells, and the retention drift history associated with the group of pages is updated with the new optimal read threshold voltage and an indication of a new reference cell generation.


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