The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Feb. 25, 2019
Toshiba Memory Corporation, Tokyo, JP;
Yuki Inuzuka, Yokohama Kanagawa, JP;
Takaaki Nakazato, Yokohama Kanagawa, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A semiconductor storage device includes a memory cell having a first variable resistance element changeable from a first state to a second state at which a resistance value of the first variable resistance element is higher than that of the first variable resistance element at the first state, and a second variable resistance element connected to the first variable resistance element in series and changeable from a third state to a fourth state at which a resistance value of the second variable resistance element is higher than that of the second variable resistance element at the third state. In the memory cell, a first snapback occurs at a first threshold current and a first threshold voltage, and a second snapback occurs at a second threshold current that is greater than the first threshold current and a second threshold voltage that is greater than the first threshold voltage.