The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Sep. 12, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hideyuki Sugiyama, Kanagawa, JP;

Naoharu Shimomura, Tokyo, JP;

Kazutaka Ikegami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract

A memory device according to an embodiment includes: a plurality of memory cells including a storage element having a first and second terminals; a reference resistor having a third and fourth terminals; a first current source electrically connected to the first terminal of the storage element in the selected memory cell; a second current source electrically connected to the third terminal; and a determination circuit that determines the greater one among a resistance value of a storage element of selected one and a resistance value of the reference resistor, the resistance value of the reference resistor being smaller than a middle value between a mean value of first resistance values obtained from the storage elements in the high-resistance state and a mean value of second resistance values obtained from the storage elements in the low-resistance state, and greater than the mean value of the second resistance values.


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