The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jun. 05, 2018
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yadhu Vamshi Vancha, Livermore, CA (US);

James Hart, Cedar Park, TX (US);

Jeffrey Koon Yee Lee, Fremont, CA (US);

Tz-Yi Liu, Palo Alto, CA (US);

Ali Al-Shamma, San Jose, CA (US);

Yingchang Chen, Cupertino, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01);
Abstract

One or more control lines other than those used to activate a non-volatile memory cell may be used to sense a data value of the cell. For example, an apparatus may include a selection circuit that selects, based on an address corresponding to a non-volatile memory cell included an array of non-volatile memory cells, a word line coupled to the non-volatile memory cells to activate the non-volatile memory cell. An amplifier circuit may sense a data value stored in the non-volatile memory cell based on a sense signal having a voltage level based on voltage levels of one or more other word lines of the array of non-volatile memory cells. In another example, a data value of a non-volatile memory cell coupled to a word line may be sensed based on the voltage levels of one or more dummy sense lines within the array.


Find Patent Forward Citations

Loading…