Error recovery of cross-die logical pages in a solid state device

Abstract

Exemplary methods and apparatus are provided to reduce read retry latency within solid state devices (SSDs) with non-volatile memories (NVMs). The reduction in read retry latency may be accomplished in some examples by prioritizing read recovery of a regular codeword over an irregular codeword for a cross-die logical page, irrespective of the location in the page with read errors. In an illustrative example, a processor (a) performs a read retry for a second codeword by setting a read voltage level to a first level for a first die, then advancing through a read retry table for the second die until the second codeword is read successfully, and (b) then performs a read retry for the first codeword by setting a read voltage level for the second die to a second level, then advancing through a read retry table for the first die until the first codeword is successfully read.