The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
May. 23, 2018
Evonik Operations Gmbh, Essen, DE;
Julian Teichmann, Frankfurt am Main, DE;
Matthias Wagner, Niddatal, DE;
Hans-Wolfram Lerner, Oberursel, DE;
Evonik Operations GmbH, Essen, DE;
Abstract
Triphenylgermylsilane (PhGe—SiH) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH). Further, a method describes the production of triphenylgermylsilane (PhGe—SiH) by reducing trichlorosilyl-triphenylgermane (PhGe—SiCl) with a hydride in solution, and another method describes the production of trichlorosilytrichlorogermane (ClGe—SiCl) by reacting trichlorosilyltriphenyigermane (PhGe—SiCl) with hydrogen chloride (HCl) in the presence of AlClin solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si).