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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10730316 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Sep. 05, 2018

Light emitting thyristor having a plurality of semiconductor layers with a specific layer having the smallest bandgap, light emitting thyristor array, exposure head, and image forming device

Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takeshi Uchida, Hiratsuka, JP;

Takako Suga, Yokohama, JP;

Assignee:

Canon Kabushiki Kaisha, Tokyo, JP;

Attorney:

Venable LLP

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
B41J 2/455 (2006.01); B41J 2/44 (2006.01); G03G 15/04 (2006.01); H01L 33/14 (2010.01); H01L 33/36 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
B41J 2/455 (2013.01); B41J 2/44 (2013.01); G03G 15/04 (2013.01); G03G 15/04036 (2013.01); H01L 33/02 (2013.01); H01L 33/14 (2013.01); H01L 33/36 (2013.01); H01L 33/0016 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01);
Abstract

A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference ΔEg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.

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Uchida, Takeshi. (2020). Light emitting thyristor having a plurality of semiconductor layers with a specific layer having the smallest bandgap, light emitting thyristor array, exposure head, and image forming device (U.S. Patent No. 10730316). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10730316

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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