The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Sep. 05, 2018
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Takeshi Uchida, Hiratsuka, JP;
Takako Suga, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/455 (2006.01); B41J 2/44 (2006.01); G03G 15/04 (2006.01); H01L 33/14 (2010.01); H01L 33/36 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
B41J 2/455 (2013.01); B41J 2/44 (2013.01); G03G 15/04 (2013.01); G03G 15/04036 (2013.01); H01L 33/02 (2013.01); H01L 33/14 (2013.01); H01L 33/36 (2013.01); H01L 33/0016 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01);
Abstract
A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference ΔEg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.