The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jun. 01, 2017
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventors:
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 3/007 (2006.01); H03H 9/24 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02102 (2013.01); B81B 3/0081 (2013.01); H03H 3/0072 (2013.01); H03H 3/0076 (2013.01); H03H 9/02259 (2013.01); H03H 9/17 (2013.01); H03H 9/171 (2013.01); H03H 9/2463 (2013.01); H03H 9/2489 (2013.01); B81C 2201/0181 (2013.01); H03H 2009/02496 (2013.01); H03H 2009/241 (2013.01);
Abstract
A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.