The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Mar. 13, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Bernhard Stojetz, Wiesent, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Christoph Eichler, Donaustauf, DE;

Andreas Löffler, Neutraubling, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/06 (2006.01); H01L 33/50 (2010.01); F21K 9/64 (2016.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01L 33/18 (2010.01); F21Y 115/30 (2016.01);
U.S. Cl.
CPC ...
H01S 5/0609 (2013.01); F21K 9/64 (2016.08); H01L 33/502 (2013.01); H01S 5/2228 (2013.01); H01S 5/309 (2013.01); H01S 5/3408 (2013.01); F21Y 2115/30 (2016.08); H01L 33/18 (2013.01); H01L 33/507 (2013.01);
Abstract

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.


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