The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jan. 17, 2018
Tohoku University, Sendai-shi, Miyagi, JP;
Konica Minolta, Inc., Chiyoda-ku, Tokyo, JP;
Yasuo Ando, Sendai, JP;
Mikihiko Oogane, Sendai, JP;
Kosuke Fujiwara, Sendai, JP;
Koujirou Sekine, Ibaraki, JP;
Junichi Jono, Tokyo, JP;
Masaaki Tsuchida, Hachioji, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
KONICA MINOLTA, INC., Tokyo, JP;
Abstract
A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.