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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10727374 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Sep. 04, 2015

Transparent conductive structure and formation thereof

Applicant:

Seoul Semiconductor Co., Ltd., Ansan, KR;

Inventors:

Jacob J. Richardson, Santa Barbara, CA (US);

Evan C. O'Hara, Santa Barbara, CA (US);

Chanseob Shin, Ansan, KR;

Assignee:

Seoul Semiconductor Co., Ltd., Asan, Gyeonggi-do, KR;

Attorney:

Berkeley Law & Technology Group, LLP

Primary Examiner:

Steven B Gauthier

Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 51/00 (2006.01); H01L 31/18 (2006.01); H01L 31/054 (2014.01); H01L 21/67 (2006.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); H01L 33/38 (2010.01); H01L 51/52 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 21/67011 (2013.01); H01L 31/022425 (2013.01); H01L 31/022483 (2013.01); H01L 31/03044 (2013.01); H01L 31/054 (2014.12); H01L 31/1856 (2013.01); H01L 31/1884 (2013.01); H01L 31/1888 (2013.01); H01L 33/38 (2013.01); H01L 51/0021 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 51/5203 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0091 (2013.01); Y02E 10/52 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

Briefly, in accordance with one embodiment, a transparent conductive structure and method to form such a structure are described. For example, an apparatus may include an optoelectronic device. In such an embodiment, an optoelectronic device may include one or more zinc oxide crystals forming a single contiguous three-dimensional transparent conductive structure. The single contiguous three-dimensional transparent conductive structure may include one or more regions thereof having one or more three dimensional geometrical features in the one or more regions of the single contiguous three-dimensional transparent conductive structure so that the single contiguous three-dimensional transparent conductive structure possesses additional electrical-type and/or optical-type properties. For example, additional electrical-type and/or optical-type properties may include electrical current management and/or light management properties.

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