The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jul. 09, 2018
The Regents of the University of Michigan, Ann Arbor, MI (US);
Mohammad Faqrul Alam Chowdhury, Montreal, CA;
Zetian Mi, Ann Arbor, MI (US);
The Regents of the University of Michigan, Ann Arbor, MI (US);
Abstract
A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV)