The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Mar. 28, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seok-Hoon Kim, Hwaseong-si, KR;

Bon-Young Koo, Suwon-si, KR;

Nam-Kyu Kim, Yongin-si, KR;

Woo-Bin Song, Hwaseong-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Su-Jin Jung, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0847 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.


Find Patent Forward Citations

Loading…