The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Mar. 22, 2018
United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Jin-Woo Han, San Jose, CA (US);
Meyya Meyyappan, San Jose, CA (US);
United States of America as Represented by the Administrator of NASA, Washington, DC (US);
Abstract
A horizontal vacuum channel transistor is provided. The horizontal transistor includes a substrate, horizontal emitter and collector electrodes formed in a layer of semiconductor material of the substrate, and a horizontal insulated gate located between the emitter and collector electrodes. The emitter electrode includes multiple horizontally-aligned emitter tips connected to a planar common portion, and the collector electrode includes a planar portion. The gate includes multiple horizontally-aligned gate apertures passing through the gate that each correspond to one of the emitter tips of the emitter electrode. The minimum distance between the emitter and collector electrodes is less than about 180 nm. Also provided are a vertical vacuum channel transistor having vertically-stacked emitter and collector electrodes, and methods for fabricating vacuum channel transistors.