The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jul. 31, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Gerhard Schmidt, Wernberg-Wudmath, AT;
Johannes Konrad Baumgartl, Riegersdorf, AT;
Matthias Kuenle, Villach, AT;
Erwin Lercher, Villach, AT;
Daniel Schloegl, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); C30B 25/00 (2006.01); C30B 31/22 (2006.01); C30B 31/02 (2006.01); H01L 21/225 (2006.01); C30B 15/00 (2006.01); C30B 15/20 (2006.01); H01L 21/02 (2006.01); C30B 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66333 (2013.01); C30B 15/007 (2013.01); C30B 15/20 (2013.01); C30B 25/00 (2013.01); C30B 31/02 (2013.01); C30B 31/22 (2013.01); H01L 21/02255 (2013.01); H01L 21/02293 (2013.01); H01L 21/02422 (2013.01); H01L 21/2253 (2013.01); H01L 21/2255 (2013.01); C30B 29/06 (2013.01); H01L 21/02002 (2013.01); H01L 29/1095 (2013.01); H01L 29/66348 (2013.01);
Abstract
A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 10/cm; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.