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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10727309 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Dec. 07, 2016

Thin film transistor array panel and conducting structure

Applicants:

Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd., Shenzhen, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Yi-Chun Kao, New Taipei, TW;

Hsin-Hua Lin, New Taipei, TW;

Po-Li Shih, New Taipei, TW;

Wei-Chih Chang, New Taipei, TW;

I-Min Lu, New Taipei, TW;

I-Wei Wu, New Taipei, TW;

Assignees:

HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD., Shenzhen, CN;

HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Stanetta D Isaac

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/441 (2006.01); H01L 21/4763 (2006.01); H01L 21/477 (2006.01); H01L 29/417 (2006.01); H01L 21/443 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/441 (2013.01); H01L 21/443 (2013.01); H01L 21/477 (2013.01); H01L 21/47635 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01);
Abstract

A thin film transistor array panel includes a first conductive layer () including a gate electrode; a channel layer () disposed over the gate; and a second conductive layer () disposed over the channel layer (). The second conductive layer () includes a multi-layered portion defining a source electrode () and a drain electrode (), which includes a first sub-layer (-), a second sub-layer (-), and a third sub-layer (-) sequentially disposed one over another. Both the third and the first sub-layers (--) include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer (-) is greater than that in the third sub-layer (-). The content ratio differentiation between the first and the third sub-layers (--) affects a lateral etch profile associated with a gap () generated in the second conductive layer () between the source and the drain electrodes (), where the associated gap () width in the third sub-layer (-) is wider than that in the first sub-layer (-).

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