The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Nov. 10, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Wei-E Wang, Austin, TX (US);
Joon Goo Hong, Austin, TX (US);
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/823468 (2013.01); H01L 27/088 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 29/78 (2013.01);
Abstract
A complimentary metal-oxide-semiconductor (CMOS) circuit including: a substrate; and a plurality of field-effect transistors on the substrate. Each of the field-effect transistors includes: a plurality of contacts; a source connected to one of the contacts; a drain connected to another one of the contacts; a gate; and a spacer between the gate and the contacts. The spacer of one of the field-effect transistors has a larger airgap than the spacer of another one of the field-effect transistors.