The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Sep. 06, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Tsubasa Imamura, Kuwana Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 22/12 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01); H01L 45/1675 (2013.01); H01L 27/2454 (2013.01); H01L 29/4908 (2013.01); H01L 29/78642 (2013.01);
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a first substrate. The method further includes performing a first process of processing a portion of the first film with plasma of first gas and a second process of removing the portion of the first film with plasma of second gas after the first process.