The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Feb. 19, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Yosuke Murakami, Yokkaichi Mie, JP;

Takeshi Ishizaki, Nagoya Aichi, JP;

Yusuke Arayashiki, Yokkaichi Mie, JP;

Kazuhiko Yamamoto, Fujisawa Kanagawa, JP;

Kana Hirayama, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/2454 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01);
Abstract

A storage device includes a first conductor, a resistance variable film, and a second conductor. The resistance variable film includes a first layer and a second layer. The second layer is located on a side opposite to the first conductor with respect to the first layer, contains oxygen, and has conductivity higher than that of the first layer. The second conductor includes a first portion and a second portion. The first portion abuts on the second layer of the resistance variable film. The second portion is separated from the resistance variable film as compared to the first portion. The oxygen content of the first portion is higher than that of the second portion.


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