The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Sep. 07, 2018
Applicant:

Technetics Group Llc, Charlotte, NC (US);

Inventors:

Jason Wright, Santa Clara, CA (US);

Angus McFadden, Santa Clara, CA (US);

Assignee:

Technetics Group LLC, Charlotte, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C09J 7/25 (2018.01); C09J 7/38 (2018.01); C09J 11/06 (2006.01); C09J 11/04 (2006.01); C09J 7/10 (2018.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); C09J 7/10 (2018.01); C09J 7/255 (2018.01); C09J 7/38 (2018.01); C09J 7/383 (2018.01); C09J 11/04 (2013.01); C09J 11/06 (2013.01); H01L 24/27 (2013.01); H01L 24/30 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); C09J 2201/40 (2013.01); C09J 2203/326 (2013.01); C09J 2400/123 (2013.01); C09J 2421/00 (2013.01); C09J 2467/006 (2013.01); C09J 2471/00 (2013.01); C09J 2483/00 (2013.01); H01L 2224/27334 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/27618 (2013.01); H01L 2224/27622 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2957 (2013.01); H01L 2224/29076 (2013.01); H01L 2224/29291 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/29564 (2013.01); H01L 2224/29687 (2013.01); H01L 2224/3016 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32055 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/3316 (2013.01); H01L 2924/0533 (2013.01); H01L 2924/0573 (2013.01); H01L 2924/062 (2013.01); H01L 2924/0685 (2013.01); H01L 2924/0715 (2013.01); Y10T 428/22 (2015.01); Y10T 428/24273 (2015.01); Y10T 428/24298 (2015.01); Y10T 428/24322 (2015.01); Y10T 428/24802 (2015.01); Y10T 428/249953 (2015.04); Y10T 428/249955 (2015.04); Y10T 428/249956 (2015.04); Y10T 428/249958 (2015.04); Y10T 428/249967 (2015.04); Y10T 428/249975 (2015.04); Y10T 428/249982 (2015.04); Y10T 428/249984 (2015.04); Y10T 428/249985 (2015.04); Y10T 428/249986 (2015.04); Y10T 428/249994 (2015.04); Y10T 428/249999 (2015.04);
Abstract

Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.


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