The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Dec. 28, 2018
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Paul S. Ho, Austin, TX (US);

Tengfei Jiang, Orlando, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 23/14 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 25/065 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/76849 (2013.01); H01L 23/147 (2013.01); H01L 23/5384 (2013.01); H01L 2224/16145 (2013.01);
Abstract

The present disclosure relates to a chip including a wafer, a back-end-of-line (BEOL) layer deposited on the wafer, a chip TSV in the wafer containing a conductive material, and a chip cap layer disposed between the chip TSV and the BEOL layer, and configured to reduce via extrusion of conductive material in the chip TSV during operation of the chip. The present disclosure further includes a 3D integrated circuit including a plurality of electrically connected chips, at least one of which is a chip as described above. The disclosure further relates to a 3D integrated circuit with an interposer, a TSV in the interposer containing a conductive material, and an interposer cap layer configured to reduce via extrusion of the conductive material located in the interposer TSV during operation of the circuit. The present disclosure further includes methods of forming such chips and 3D integrated circuits.


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