The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Dec. 19, 2018
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Hubert Moriceau, Saint-Egreve, FR;

Christophe Morales, Saint Pierre de Mesage, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/268 (2013.01); H01L 21/3247 (2013.01);
Abstract

This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.


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