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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10727103 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Oct. 01, 2018

Semiconductor device, method for producing the same, and laminate

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Hiroyuki Yasuda, Annaka, JP;

Michihiro Sugo, Annaka, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Latanya N Crawford

Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); C09J 7/38 (2018.01); C09J 161/06 (2006.01); C09J 161/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); C09J 7/38 (2018.01); C09J 7/381 (2018.01); C09J 161/06 (2013.01); C09J 161/12 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); C09J 2203/326 (2013.01); C09J 2205/302 (2013.01); C09J 2205/31 (2013.01); C09J 2483/00 (2013.01); C09J 2499/00 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/211 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/181 (2013.01);
Abstract

Disclosed herein is a semiconductor device including: a support; a double-layered adhesive resin layer formed on the support, an insulating layer and a redistribution layer formed on the adhesive resin layer; a chip layer, and a mold resin layer, wherein the adhesive resin layer includes a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.

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