The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Feb. 14, 2019
Applicant:
SK Hynix System Ic Inc., Chungcheongbuk-do, KR;
Inventor:
Soon Yeol Park, Daejeon, KR;
Assignee:
SK hynix system ic Inc., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/74 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/28114 (2013.01); H01L 21/74 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/42376 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
A method includes forming a blocking pattern on a buffer insulation layer disposed over a first region in a semiconductor region of a second conductivity type, forming an ion implantation mask pattern having an opening over the buffer insulation layer to expose the blocking pattern by the opening of the ion implantation mask pattern, and implanting impurity ions of a first conductivity type for forming a body region of the first conductivity type into the first region using the ion implantation mask pattern.