The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jun. 20, 2019
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Xueliang Zhu, Xiamen, CN;
Jianming Liu, Xiamen, CN;
Chang-Cheng Chuo, Xiamen, CN;
Bing-Yang Chen, Xiamen, CN;
Chen-ke Hsu, Xiamen, CN;
Chung-Ying Chang, Xiamen, CN;
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Abstract
A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.