Wafer-scale catalytic deposition of black phosphorus

Abstract

A method for wafer-level deposition of a semiconductor layer structure including at least one two-dimensional black phosphorus layer. The method includes providing a wafer substrate and a metal catalyst layer on the substrate. The method includes heating a phosphorus material to generate a Pflux and heating the Pflux to generate a Pflux, where the Pflux is deposited on the metal catalyst layer using molecular beam epitaxy or chemical vapor deposition. The process of depositing the black phosphorus layer can include adding a dopant or alloy to the Pflux to modify the band gap of the phosphorus layer. The method includes heating the substrate to a temperature above a temperature that causes red phosphorus to evaporate from the substrate, but does not cause black phosphorus to evaporate from the substrate.