The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Jan. 25, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Sung-Bo Shim, Hwaseong-si, KR;

Il-Gyou Shin, Hwaseong-si, KR;

Seon-Young Lee, Seoul, KR;

Alexander Schmidt, Suwon-si, KR;

Shin-Wook Yi, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); G01N 23/20058 (2018.01);
U.S. Cl.
CPC ...
H01J 37/26 (2013.01); G01N 23/20058 (2013.01); H01J 2237/221 (2013.01); H01J 2237/2617 (2013.01);
Abstract

A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.


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