The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Jul. 22, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Karim Hassan, Grenoble, FR;

Yohan Desieres, Grenoble, FR;

Bertrand Szelag, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/017 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/01708 (2013.01); H01S 5/026 (2013.01); H01S 5/0215 (2013.01); H01S 5/0421 (2013.01); H01S 5/22 (2013.01); H01S 5/3412 (2013.01); H01S 5/3432 (2013.01); G02F 2001/01791 (2013.01); G02F 2201/06 (2013.01); G02F 2202/101 (2013.01); G02F 2202/105 (2013.01); G02F 2202/108 (2013.01); G02F 2203/50 (2013.01);
Abstract

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 μm, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.


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