The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jul. 12, 2017
Applicant:
Snu R&db Foundation, Seoul, KR;
Inventors:
Sang Lyul Min, Seoul, KR;
Yong Hun Lee, Seoul, KR;
Assignee:
SNU R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 29/12 (2006.01); G01R 29/08 (2006.01); G01R 15/16 (2006.01); G01R 29/24 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G01R 29/12 (2013.01); G01R 15/165 (2013.01); G01R 29/0814 (2013.01); G01R 29/0878 (2013.01); G01R 29/24 (2013.01); H01L 27/0251 (2013.01);
Abstract
One embodiment provides a technique of adjusting a gate voltage to be applied to at least one MOS capacitor and an amount of electric charges to be stored in the MOS capacitor so as to determine a sensitivity of a change in the amount of electric charges stored in the MOS capacitor, and exposing the MOS capacitor to an electric filed for a predetermined amount of time and then reading an electron inflow or outflow result due to the electric field so as to interpret the intensity and the direction of the electric field, thereby measuring the intensity and the direction of the electric field.