The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Feb. 21, 2017
Qualcomm Incorporated, San Diego, CA (US);
Yong Ju Lee, San Diego, CA (US);
Joung Won Park, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
The disclosure generally relates to a deoxyribonucleic acid (DNA) sequencing circuit having a controllable pore size and a lower membrane capacitance and noise floor relative to biological nanopore devices. For example, design principles used to fabricate a fin-shaped field effect transistor (FinFET) may be applied to form, on a first wafer, a nanopore that has a desired pore size in a silicon-based membrane. Electrodes and an interconnect embedded with an amplifier and analog-to-digital converter (ADC) may be formed on a separate second wafer, wherein the first wafer and the second wafer may then be bonded and further processed to form a sensing device that includes appropriate wells and pores to be used in a DNA sequencing circuit.