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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10723614 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Dec. 11, 2017

Devices with localized strain and stress tuning

Applicant:

Vanguard International Semiconductor Singapore Pte. Ltd., Singapore, SG;

Inventors:

You Qian, Singapore, SG;

Humberto Campanella Pineda, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Rajesh Nair, Singapore, SG;

Assignee:

VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Winston Hsu

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 21/20 (2006.01); G01C 19/56 (2012.01); G01P 15/097 (2006.01); B41J 2/05 (2006.01); H01L 41/09 (2006.01); H01L 41/22 (2013.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0072 (2013.01); B81C 1/00666 (2013.01); B81B 2201/0214 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0143 (2013.01);
Abstract

A device, such as a MEMS device, with stress tuning to achieve a desired stack stress across the wafer. The stress tuning includes trimming a stress compensation layer over a target layer having different stresses in different target layer regions. The trimming may include ion beam trimming to produce a stress compensation layer having different thicknesses over the different target layer regions to balance the stress of the target layer to a desired stress. The desired stress may result in almost zero residual stress to produce an almost flat MEMS device.

Find Patent Forward Citations

Qian, You. (2020). Devices with localized strain and stress tuning (U.S. Patent No. 10723614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10723614

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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