The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jun. 09, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Katsumi Ono, Tokyo, JP;
Kenji Hirano, Tokyo, JP;
Masato Negishi, Tokyo, JP;
Masato Suzuki, Tokyo, JP;
Tatsuro Yoshino, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-Ku, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes the steps of: preparing a semiconductor substrate including a first semiconductor layer and a second semiconductor layer; and irradiating the semiconductor substrate with laser light from the first semiconductor layer side to divide the semiconductor substrate into individual semiconductor chips. The first semiconductor layer includes a semiconductor material transparent to the laser light. The second semiconductor layer includes a semiconductor material opaque to the laser light. In the step of irradiating with the laser light, laser light having intensity that makes the semiconductor material of the first semiconductor layer opaque to the laser light is irradiated.